Heinz K. Henisch – författare

Providing the first comprehensive overview of the method of crystal growth in gels, Professor Henisch reviews the field, covering the underlying physics as well as the empirical experience of growth techniques accumulated over the past century. In addition, the book discusses the phenomenon of periodic precipitation, which often governs the distribution of crystal in laboratory growth systems. For the first time, computer techniques are brought to bear on the subject, the diffusion equations being solved numerically, in association with the conditions governing precipitations and crystal growth.

Providing the first comprehensive overview of the method of crystal growth in gels, Professor Henisch reviews the field, covering the underlying physics as well as the empirical experience of growth techniques accumulated over the past century. In addition, the book discusses the phenomenon of periodic precipitation, which often governs the distribution of crystal in laboratory growth systems. For the first time, computer techniques are brought to bear on the subject, the diffusion equations being solved numerically, in association with the conditions governing precipitations and crystal growth.

Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a ""quasi-equilibrium"" condition is inappreciably different from that of thermal equilibrium itself. Thus the results of Part I are not invalidated when the properties of a semiconductor are measured using small current densities. Part II considers non-equilibrium statistics for semiconductors with appreciable excess carrier densities. The various kinds of recombination mechanism are examined, and the consequences discussed for steady state and transient situations. The subject matter of this book was deliberately restricted in scope in order to be of maximum value to scientists with an active interest in the basic properties of semiconducting materials.

International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices. The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresistors, growth of semiconductors from the melt, and galvanomagnetic materials and effects. The text then elaborates on the applications of the Hall effect and the magnetoresistance effect. Topics include contactless control, connecting the field-plate to other semiconductor devices, non-contacting variable resistance and potentiometer, measurement of magnetic fields and quantities proportional to magnetic fields, and measurement of quantities representable by a magnetic induction. The manuscript underscores other possibilities for controlling the electrical properties of semiconductors by means of a magnetic field. The publication is a vital source of data for researchers wanting to explore the structure and applications of galvanomagnetic devices.

Intermetallic Semiconducting Films introduces the physics and technology of AшВv compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three temperature methods of preparing the film. Processes such as vacuum evaporation, flash evaporation, condensation, and coevaporation are explained. Liquid phase epitaxial growth is another method discussed in the book. A chapter of the book explains the electrical and galvanomagnetic properties of films. The text is intended for students doing experimental investigations on semiconducting films and for research scientists on the field of semiconductors.

Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and V of the Periodic Table (such as gallium phosphide). The text also explains polarization of free charge carriers, the outline of junction breakdown theory, carrier recombination, and phosphor suspensions. The book describes the growth of zinc sulfide crystals (from solution, melt, or vapor), electroluminescence effects in zinc sulfide crystals, and observations made in the pre-breakdown region in single crystals of cadmium sulfide. Boer and Kummel (1952) describes the pre-breakdown region, under stable and wholly reversible conditions, as being connected with thermal instability. The book notes that the reversibility and repeatability of the phenomena below the breakdown point show that the field effects responsible for the sharp increase in conductance do not damage the crystal. The text also discusses the construction and characteristics of electroluminescent cells, as well as their applications. The book will prove valuable for physico-chemists, technical designers, or engineers whose works are related to instrumentation and solid-state electronics.

Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.