Haroon Ahmad – författare

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modelled. The author begins with an overview of plasma reactors, and discusses the various models for understanding plasma processes. He then covers plasma chemistry, and describes in detail the modelling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many exercises and will serve as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practising engineers in the semiconductor industry.

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modelled. The author begins with an overview of plasma reactors, and discusses the various models for understanding plasma processes. He then covers plasma chemistry, and describes in detail the modelling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many exercises and will serve as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practising engineers in the semiconductor industry.