Hideo Hosono – författare

A research project at the Tokyo Institute of Technology – dedicated to fostering innovation in the field of nanomaterials – was selected as one of the 21st Century COE (Center of Excellence) programs. The achievements of this COE program, which builds on the strong tradition of materials science in the Institute, are summarized within this book.Nanomaterials: Research Towards Applications is divided into four main parts:- Revolutionary Oxides- State-of-the-Art Polymers- Nanostructure Design for New Functions- Nanostructure Architecture for Engineering Applications- Each section consists of three or four chapters related to inorganic, organic and metallic nanomaterials

AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials designComprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defectsPractical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronicsIn-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTsPerfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

AMORPHOUS OXIDE SEMICONDUCTORS

A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field

In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors.

The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes:

A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs

Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices.

WILEY SID Series in Display Technology

Series Editor: Ian Sage, Abelian Services, Malvern, UK

The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

AMORPHOUS OXIDE SEMICONDUCTORS

A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field

In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors.

The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes:

A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs

Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices.

WILEY SID Series in Display Technology

Series Editor: Ian Sage, Abelian Services, Malvern, UK

The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Comprehensive resource reviewing fundamentals, device physics and reliability, fabrication processes, and numerous emerging applications of oxide thin film transistor technology over performing traditional thin film transistor technologies Oxide Thin Film Transistors book presents a comprehensive overview of oxide thin film transistor (TFT) science and technology, including fundamental material properties, device operation principles, modeling, fabrication processes, and applications. Split into four sections, the book first details oxide TFT materials including material parameters, and electrical and contact properties. The next section describes oxide TFT devices including designs, reliability, and comparison with other TFT types. The third part delves into the fabrication processes of oxide TFTs. The last section provides insight into existing and emerging applications of oxide TFTs including displays, imagers, circuits, sensors, flexible electronics, and circuits. Written by a team of well-reputed researchers in the field including the inventor of the IGZO TFT, Oxide Thin Film Transistors include information on: Electronic and crystal structure of widegap oxides, covering electronic structure of n- and p-type oxide semiconductors as well as doping limit and band alignmentDevice physics, covering operation principles, reliability, comparison with other TFT types, and high-frequency performanceFabrication processes, covering deposition methods, gate insulators, and passivation layersApplications, covering liquid crystal, light emitting diode, and electrophoretic displays, flexible electronics, imagers, and integrated circuitsOxide Thin Film Transistors is an ideal textbook resource for students who want to learn about oxide TFTs and a useful, up-to-date reference for researchers and engineers working on oxide TFTs and in related areas.

Comprehensive resource reviewing fundamentals, device physics and reliability, fabrication processes, and numerous emerging applications of oxide thin film transistor technology over performing traditional thin film transistor technologies

Oxide Thin Film Transistors book presents a comprehensive overview of oxide thin film transistor (TFT) science and technology, including fundamental material properties, device operation principles, modeling, fabrication processes, and applications.

Split into four sections, the book first details oxide TFT materials including material parameters, and electrical and contact properties. The next section describes oxide TFT devices including designs, reliability, and comparison with other TFT types. The third part delves into the fabrication processes of oxide TFTs. The last section provides insight into existing and emerging applications of oxide TFTs including displays, imagers, circuits, sensors, flexible electronics, and circuits.

Written by a team of well-reputed researchers in the field including the inventor of the IGZO TFT, Oxide Thin Film Transistors include information on:

Electronic and crystal structure of widegap oxides, covering electronic structure of n- and p-type oxide semiconductors as well as doping limit and band alignmentDevice physics, covering operation principles, reliability, comparison with other TFT types, and high-frequency performanceFabrication processes, covering deposition methods, gate insulators, and passivation layersApplications, covering liquid crystal, light emitting diode, and electrophoretic displays, flexible electronics, imagers, and integrated circuits

Oxide Thin Film Transistors is an ideal textbook resource for students who want to learn about oxide TFTs and a useful, up-to-date reference for researchers and engineers working on oxide TFTs and in related areas.

Comprehensive resource reviewing fundamentals, device physics and reliability, fabrication processes, and numerous emerging applications of oxide thin film transistor technology over performing traditional thin film transistor technologies

Oxide Thin Film Transistors book presents a comprehensive overview of oxide thin film transistor (TFT) science and technology, including fundamental material properties, device operation principles, modeling, fabrication processes, and applications.

Split into four sections, the book first details oxide TFT materials including material parameters, and electrical and contact properties. The next section describes oxide TFT devices including designs, reliability, and comparison with other TFT types. The third part delves into the fabrication processes of oxide TFTs. The last section provides insight into existing and emerging applications of oxide TFTs including displays, imagers, circuits, sensors, flexible electronics, and circuits.

Written by a team of well-reputed researchers in the field including the inventor of the IGZO TFT, Oxide Thin Film Transistors include information on:

Electronic and crystal structure of widegap oxides, covering electronic structure of n- and p-type oxide semiconductors as well as doping limit and band alignmentDevice physics, covering operation principles, reliability, comparison with other TFT types, and high-frequency performanceFabrication processes, covering deposition methods, gate insulators, and passivation layersApplications, covering liquid crystal, light emitting diode, and electrophoretic displays, flexible electronics, imagers, and integrated circuits

Oxide Thin Film Transistors is an ideal textbook resource for students who want to learn about oxide TFTs and a useful, up-to-date reference for researchers and engineers working on oxide TFTs and in related areas.

From fundamental physics point of view, iron-based superconductors have properties that are more amenable to band structural calculations. This book reviews the progress made in this fascinating field. With contributions from leading experts, the book provides a guide to understanding materials, physical properties, and superconductivity mechanism aspects, and is important for students and beginners to have an overall view of the recent progress in this active field.