Hiroshi Funakubo – författare

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized.The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.- Explores all aspects of the structural and electrical properties of HfO2, including processes, modeling, and implementation into semiconductor devices- Considers potential applications, including FeCaps, FeFETs, FTJs, energy storage, pyroelectric, piezoelectric, and neuromorphic applications- Provides a comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights into the problems of downscaling that conventional ferroelectrics face