James K. Olthoff – författare

Gaseous Dielectrics VIII covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.

This is a detailed record of the proceedings The Ninth International Symposium on Gaseous Dielectrics held at the Turf Valley Resort and Conference Center, Ellicott City, Maryland, USA, May 21-25, 2001. It covers advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics. The volume deals with fundamental contributions to the basic physics of gaseous dielectric materials and the understanding of basic gas discharge mechanisms and plasmas. It also deals with advances in gas-insulated equipment, especially gas-insulated transmission lines, gas-insulated transformers, and gas-insulated arc and current interrupters and the associated issues of recycling and handling of gas dielectric gases and mixtures. Included in this volume are recent developments in basic discharge and breakdown mechanisms, modeling and simulations of electrical and plasma behavior of dielectric gases, partial discharges and diagnostics, high-pressure gas dielectrics (especially SF6/N2 gas mixtures), gas decomposition, effects of particle contamination on the gas dielectric properties, and recycling of used SF6.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro­ vides an up-to-date and comprehensive account of the fundamental in­ teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in­ elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the­ art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6.

The Tenth International Symposium on Gaseous Dielectrics was held at the Astir Palace Vouliagmeni Hotel, Athens, Greece, March 29-April 2, 2004. The symposium. continued the interdisciplinary character and comprehensive approach of the preceding nine symposia. Gaseous Dielectrics X is a detailed record of the symposium proceedings. It covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics. It is hoped that Gaseous Dielectrics X will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Tenth International Symposium on Gaseous Dielectrics consisted of L. G. Christophorou (Chainnan, Greece), J. K. Olthoff (co-Chainnan, USA), A. Bulinski (Canada), A. H. Cookson (USA), C. T. Dervos (Greece), J. de Urquijo (Mexico), J. Blackman (USA), O. Farish (UK), M. E. Frechette (Canada), I. Gillimberti (Italy), A. Garscadden (USA), A. Gleizes (France), H. Hama (Japan), T. Kawamura (Japan), E. Marode (France), I. W. McAllister (Denmark), H. Morrison (Canada), A. H. Mufti (Saudi Arabia), L. Niemeyer (Switzerland), W. Pfeiffer (Germany), Y. Qiu (China), I.Sauers (USA), M. Schmidt (Germany), H.-H. Schramm (Germany), L. van der Zel (USA), S. Yanabu (Japan), Y. Wang (USA), and J. W. Wetzer (The Netherlands). The Local Arrangements Committee consisted of J. N. Avaritsiotis, P. Vassiliou, C. T. Dervos of The National Technical University of Athens, C. A. Stassinopoulos of the Aristotelian University of Thessaloniki, and D.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro­ vides an up-to-date and comprehensive account of the fundamental in­ teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in­ elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the­ art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6.

The Tenth International Symposium on Gaseous Dielectrics was held at the Astir Palace Vouliagmeni Hotel, Athens, Greece, March 29-April 2, 2004. The symposium. continued the interdisciplinary character and comprehensive approach of the preceding nine symposia. Gaseous Dielectrics X is a detailed record of the symposium proceedings. It covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics. It is hoped that Gaseous Dielectrics X will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Tenth International Symposium on Gaseous Dielectrics consisted of L. G. Christophorou (Chainnan, Greece), J. K. Olthoff (co-Chainnan, USA), A. Bulinski (Canada), A. H. Cookson (USA), C. T. Dervos (Greece), J. de Urquijo (Mexico), J. Blackman (USA), O. Farish (UK), M. E. Frechette (Canada), I. Gillimberti (Italy), A. Garscadden (USA), A. Gleizes (France), H. Hama (Japan), T. Kawamura (Japan), E. Marode (France), I. W. McAllister (Denmark), H. Morrison (Canada), A. H. Mufti (Saudi Arabia), L. Niemeyer (Switzerland), W. Pfeiffer (Germany), Y. Qiu (China), I.Sauers (USA), M. Schmidt (Germany), H.-H. Schramm (Germany), L. van der Zel (USA), S. Yanabu (Japan), Y. Wang (USA), and J. W. Wetzer (The Netherlands). The Local Arrangements Committee consisted of J. N. Avaritsiotis, P. Vassiliou, C. T. Dervos of The National Technical University of Athens, C. A. Stassinopoulos of the Aristotelian University of Thessaloniki, and D.

Gaseous Dielectrics IX covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.