Peter Capper – författare

Organized into three sections this text aims to give an insight into this area of electronic materials activity. The first section covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the recent area of low dimensional solids and the novel concepts which arise from them; the second section discusses the properties of the materials which make them useful for various applications such as optical, transport, doping, defects, diffusion, structural and the interfacial and surface effects; and a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growthLiquid phase epitaxy (LPE) growthMetal-organic vapour phase epitaxy (MOVPE)Molecular beam epitaxy (MBE)Alternative substratesMechanical, thermal and optical properties of MCTDefects, diffusion, doping and annealingDry device processingPhotoconductive and photovoltaic detectorsAvalanche photodiode detectorsRoom-temperature IR detectors

Advanced textbook on inorganic glasses suitable for both undergraduates and researchers. Engaging style to facilitate understandingSuitable for senior undergraduates, postgraduates and researchers entering material science, engineering, physics, chemistry, optics and photonics fieldsDiscusses new techniques in optics and photonics including updates on diagnostic techniquesComprehensive and logically structured

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamondsInternational group of contributors from academia and industry provide a balanced treatmentIncludes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa

Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the fieldThe contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatmentBuilds-on an established series known in the communityHighly pertinent to current and future developments in telecommunications and computer-processing industries.

Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The subsequent developments of these detectors, such as thermopiles, resistance bolometers, Golay cells and pyroelectric detectors, can operate at ambient temperature but have disadvantages of insensitivity and slowness. A wide variety of semiconductor photon detectors have been developed and these possess very high sensitivity, high frequency response but have the disadvantage of needing cryogenic cooling, particularly at longer wavelengths. In the main, the applications have been in the military sphere, but widespread industrial and scientific applications also exist. The majority of development funding for these semiconducting IR detectors has, however, come from military sources. This book is an attempt to provide an up-to-date view of the various IR detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers to the field and at those already working in the IR industry. It is hoped that the former will find the book readable both as an introductory text and as a useful guide to the literature. Workers in one of the various IR areas will, hopefully, find the book useful in bringing them up-to-date with other, sometimes competing, technologies. To both groups of readers we trust that the book will prove interesting, thought-provoking and a spur to further progress in this fascinating and challenging field of endeavour.

Systematically discusses the growth method, material properties, and applications for key semiconductor materialsMOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics.Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each materialIncludes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoringLooks at important materials such as III-V and II-VI compounds, quantum dots, and nanowiresProvides topical and wide-ranging coverage from well-known authors in the fieldPart of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Complete coverage of the field of silicon-based photonic devices, including a chapter on nonlinear silicon photonics Silicon Photonics discusses the physics, technology, and device operation of photonic devices using silicon, Group IV semiconductors, and their alloys. The book delivers an optimal combination of background information about photonic structures with description of up-to-date results and trends in silicon photonics. This Second Edition includes a new chapter on nonlinear silicon photonics as well as numerous updates to existing content. Readers will find information on the role of silicon in photonics and its advantages and disadvantages as well as the properties of these alloys. Subsequent chapters in Silicon Photonics explore topics including: Quantum structures, covering quantum wells, wires, and dots, superlattices, Si-based quantum structures, and effects of electric fieldsOptical processes, covering absorption processes in semiconductors, intervalence band absorption, free-carrier absorption, and recombination and luminescenceSi light modulators, covering electrorefraction, thermo-optic effects, modulators, and optical and electrical structuresRaman lasers, covering Raman scattering, the Raman effect in silicon, the Raman gain coefficient, and continuous-wave Raman lasersPrinciples of planar waveguide devices, covering directional couplers and distributed Bragg reflectorsSilicon Photonics is an excellent resource on the subject for materials scientists, applied physicists, electrical engineers, and postgraduate students working in Si photonics.

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe­ family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The subsequent developments of these detectors, such as thermopiles, resistance bolometers, Golay cells and pyroelectric detectors, can operate at ambient temperature but have disadvantages of insensitivity and slowness. A wide variety of semiconductor photon detectors have been developed and these possess very high sensitivity, high frequency response but have the disadvantage of needing cryogenic cooling, particularly at longer wavelengths. In the main, the applications have been in the military sphere, but widespread industrial and scientific applications also exist. The majority of development funding for these semiconducting IR detectors has, however, come from military sources. This book is an attempt to provide an up-to-date view of the various IR detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers to the field and at those already working in the IR industry. It is hoped that the former will find the book readable both as an introductory text and as a useful guide to the literature. Workers in one of the various IR areas will, hopefully, find the book useful in bringing them up-to-date with other, sometimes competing, technologies. To both groups of readers we trust that the book will prove interesting, thought-provoking and a spur to further progress in this fascinating and challenging field of endeavour.