Peter Gielisse - Böcker

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics.The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed.

Diamond-based composites, with their advantages of hardness, high Young's modulus and the like, have demonstrated new and unusual features, such as stability to high temperatures and pressure shocks and a large internal surface that can be controlled to offer customized electrical, magnetic and optical properties, leading to efficient filters, absorbents, sensors and other tools for environmental control and monitoring. This volume covers the synthesis of materials, their characterization and properties, trends in high pressure and high temperature technologies, low pressure technologies, basic principles of DBC material science, and future developments in electronics, optics, industrial tools and components, biotechnology and medicine. Wide band-gap materials are considered, ranging from molecular clusters, nanophase materials, growth, processing and synthesis. The processing of composite based materials can be classified into six basic methods: in situ growth and high pressure/high temperature catalytic conversion; mix and sinter (c-BN plus metal-ceramic polymer mix); direct sintering; direct polymorphic conversion; shock detonation; and SHS sintering.

This text covers nucleation and growth; modeling and phase equilibria; properties characterisation; diamond-like carbon; and wide bandgap nitrides and carbides of Diamond and Diamond-Film applications as presented as the proceedings of the third international symposium on Diamond Films in St.Petersburg, Russia June 16-19, 1996

Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics.The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed.