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8 produkter
8 produkter
1 479 kr
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The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices.
1 479 kr
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The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices.
1 868 kr
Skickas inom 10-15 vardagar
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
856 kr
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The SISDEP 93 conference proceedings present outstanding research and development results in the area of numerical process and device simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconductor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understanding of physical effects, these proceedings support the simulation community and the process- and device engineers who need reliable numerical simulation tools for characterization, prediction, and development. This book covers the following topics: process simulation and equipment modeling, device modeling and simulation of complex structures, device simulation and parameter extraction for circuit models, integration of process, device and circuit simulation, practical applications of simulation, algorithms and software.
384 kr
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C ist eine der bedeutendsten Programmiersprachen und wird heute sehr häufig eingesetzt. Die Autoren haben jahrelange Erfahrung in der Programmierung mit C, der Vermittlung von Programmiersprachen und Programmiermethodik in das Lehrbuch einfließen lassen. Der Leser soll nicht von der Komplexität und den vielen Möglichkeiten der Sprache C überfordert werden, sondern das Wesentliche – die Programmiermethodik – lernen. Was ist Programmieren? Wie werden programmtechnische Probleme gelöst? Wie beginnen? Diese Fragen werden ebenso behandelt wie die Lösung komplexerer Aufgaben. Schrittweise wird die Programmierung anhand der Sprache C erlernt und mit Beispielen und Aufgaben vertieft und wiederholt. Der Sprachumfang von C wird vorgestellt und kritisch betrachtet, um typische Fallen zu vermeiden.Nach grundlegenden Betrachtungen und fundierter Behandlung der Sprache C befassen sich die letzten Kapitel mit Verfahren, Methoden und Problemen, die in der Programmierung häufig anzutreffen sind. Für die Neuauflage wurden einige kleine Fehler korrigiert und dem Buch ein Index hinzugefügt.
1 584 kr
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The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
538 kr
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The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
538 kr
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As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a "virtual fab" S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with "robust", "proven" tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.