Tibor Grasser - Böcker

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;Enables readers to design more reliable semiconductor devices;Offers the most up-to-date information on point defects, based on physical microscopic models.

III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;Enables readers to design more reliable semiconductor devices;Offers the most up-to-date information on point defects, based on physical microscopic models.

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Hot Carrier Degradation in Semiconductor Devices

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Dear Readers, Since the ground-breaking, Nobel-prize crowned work of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers and polymers with an alternating bonding structure at the end of the 1970s, the academic and industrial research on hydrocarbon-based semiconducting materials and devices has made encouraging progress. The strengths of semiconducting polymers are currently mainly unfolding in cheap and easily assembled thin ?lm transistors, light emitting diodes, and organic solar cells. The use of so-called “plastic chips” ranges from lightweight, portable devices over large-area applications to gadgets demanding a degree of mechanical ?exibility, which would overstress conventionaldevices based on inorganic,perfect crystals. The ?eld of organic electronics has evolved quite dynamically during the last few years; thus consumer electronics based on molecular semiconductors has gained suf?cient market attractiveness to be launched by the major manufacturers in the recent past. Nonetheless, the numerous challenges related to organic device physics and the physics of ordered and disordered molecular solids are still the subjects of a cont- uing lively debate. The future of organic microelectronics will unavoidably lead to new devi- physical insights and hence to novel compounds and device architectures of - hanced complexity. Thus, the early evolution of predictive models and precise, computationally effective simulation tools for computer-aided analysis and design of promising device prototypes will be of crucial importance.

Dear Readers, Since the ground-breaking, Nobel-prize crowned work of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers and polymers with an alternating bonding structure at the end of the 1970s, the academic and industrial research on hydrocarbon-based semiconducting materials and devices has made encouraging progress. The strengths of semiconducting polymers are currently mainly unfolding in cheap and easily assembled thin ?lm transistors, light emitting diodes, and organic solar cells. The use of so-called “plastic chips” ranges from lightweight, portable devices over large-area applications to gadgets demanding a degree of mechanical ?exibility, which would overstress conventionaldevices based on inorganic,perfect crystals. The ?eld of organic electronics has evolved quite dynamically during the last few years; thus consumer electronics based on molecular semiconductors has gained suf?cient market attractiveness to be launched by the major manufacturers in the recent past. Nonetheless, the numerous challenges related to organic device physics and the physics of ordered and disordered molecular solids are still the subjects of a cont- uing lively debate. The future of organic microelectronics will unavoidably lead to new devi- physical insights and hence to novel compounds and device architectures of - hanced complexity. Thus, the early evolution of predictive models and precise, computationally effective simulation tools for computer-aided analysis and design of promising device prototypes will be of crucial importance.

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.