V Ramesh Kumar – författare
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3 produkter
3 produkter
Inbunden, Engelska, 2021
728 kr
Skickas inom 5-8 vardagar
Häftad, Engelska, 2016
540 kr
Skickas inom 10-15 vardagar
The book provides accurate FDTDmodels for on-chip interconnects, covering most recent advancements inmaterials and design. Furthermore, depending on the geometry and physicalconfigurations, different electrical equivalent models for CNT and GNR basedinterconnects are presented. Based on the electrical equivalent models theperformance comparison among the Cu, CNT and GNR-based interconnects are alsodiscussed in the book. The proposed models are validated with the HSPICEsimulations.The book introduces the currentresearch scenario in the modeling of on-chip interconnects. It presents thestructure, properties, and characteristics of graphene based on-chipinterconnects and the FDTD modeling of Cu based on-chip interconnects. Themodel considers the non-linear effects of CMOS driver as well as thetransmission line effects of interconnect line that includes couplingcapacitance and mutual inductance effects. In a more realistic manner, theproposed model includes theeffect of width-dependent MFP of the MLGNR whiletaking into account the edge roughness.
E-bok
PDF, Engelska, 2016687 kr
Läs direkt efter köp
The book provides accurate FDTDmodels for on-chip interconnects, covering most recent advancements inmaterials and design. Furthermore, depending on the geometry and physicalconfigurations, different electrical equivalent models for CNT and GNR basedinterconnects are presented. Based on the electrical equivalent models theperformance comparison among the Cu, CNT and GNR-based interconnects are alsodiscussed in the book. The proposed models are validated with the HSPICEsimulations.
The book introduces the currentresearch scenario in the modeling of on-chip interconnects. It presents thestructure, properties, and characteristics of graphene based on-chipinterconnects and the FDTD modeling of Cu based on-chip interconnects. Themodel considers the non-linear effects of CMOS driver as well as thetransmission line effects of interconnect line that includes couplingcapacitance and mutual inductance effects. In a more realistic manner, theproposed model includes theeffect of width-dependent MFP of the MLGNR whiletaking into account the edge roughness.