Physics of Semiconductor Devices

Name: Physics of Semiconductor Devices
Brand: Springer International Publishing AG
Price: 3662 SEK
Availability: InStock

Proceedings of IWPSD 2017

AvR. K. Sharma,D.S. Rawal

Springer International Publishing AG

2019

Del i serien Springer Proceedings in Physics

3 662 kr

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Beskrivning

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Produktinformation

Märke:Springer International Publishing AG
Utgivningsdatum:2019-02-01
Höjd:155 x 235 x 90 mm
Vikt:2 388 g
Språk:Engelska
Serie:Springer Proceedings in Physics
Antal sidor:1 299
Förlag:Springer International Publishing AG
EAN:9783319976037

Utforska kategorier

Innehållsförteckning

Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot â€“ Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.