Swift Ion Beam Analysis in Nanosciences

Denis Jalabert joined the institute of Nanosciences and Cryogenics at the CEA Grenoble in France 25 years ago. Since 1998, he has led the ion beam analysis activity of MINATEC/Grenoble and, more specifically, the Medium Energy Ion Scattering technique.Ian Vickridge, CNRS Research Director in France, leads the SAFIR IBA platform of the Paris NanoSciences Institute, UPMC, Paris, France. Editor of Nuclear Instruments and Methods Section B since 2007, he has been involved in IBA for over 25 years.Amal Chabli, CEA Research Director in France, is Senior Scientist at the Solar Technologies Department of the LITEN Institute, CEA, Grenoble, France. She has been involved in material characterization at the nanoscale in micro and nanotechnologies R&D for over 30 years.

• Preamble ixIntroduction xiChapter 1 Fundamentals of Ion-solid Interactions with a Focus on the Nanoscale 11.1 General considerations 11.1.1 Wavelengths of ions, electrons and X-rays 11.1.2 Penetration depths of ions, electrons and X-rays 71.2 Basic physical concepts 81.2.1 Energy loss and range of ions in matter 81.2.2 Energy straggling 111.2.3 Elastic scattering 131.3 Channeling, shadowing and blocking 201.3.1 Channeling 201.3.2 Shadowing 231.3.3 Blocking 301.4 1D layers: limits to depth resolution 341.5 2D and 3D objects: aspects of lateral resolution 381.5.1 Beam focusing 381.5.2 Simulation of nanostructures 43Chapter 2 Instruments and Methods 452.1 Instruments 452.1.1 Accelerators 452.1.2 Detectors and data acquisition 482.1.3 Analysis chambers 542.2 Methods 552.2.1 RBS and MEIS 562.2.2 ERDA 622.2.3 Narrow resonance profiling 64Chapter 3 Applications 693.1 Example of resonances/light element profiling 693.1.1 Introduction 693.1.2 Channeling study of the SiO2/Si interface 703.1.3 Narrow resonance profiling and stable isotopic tracing studies of the oxidation of silicon 733.1.4 Thermal oxidation of silicon carbide 763.1.5 Diffusion and reaction of CO in thermal SiO2: transport, exchange and SiC nanocrystal growth 813.2 Quantitative analysis/heavy element profiling 863.2.1 RBS quantitative analysis of quantum dots and quantum wells 863.2.2 CMOS transistors and the race for miniaturization 1143.3 Examples of HR-ERD analysis 1313.3.1 Introduction 1313.3.2 HRBS/HR-ERD comparison 1323.3.3 HR-ERD profiles of Al2O3/TiO2 nanolaminates 1333.4 Channeling/defect profiling 1353.4.1 Introduction 1353.4.2 Arsenic implant in ultra-shallow-junctions 1353.5 Blocking/strain profiling 1473.5.1 Introduction 1473.5.2 GaN/AlN system 1513.5.3 Si/Ge system 1803.6 3D MEIS/real space structural analysis 1953.6.1 Electrostatic analyzer method 1963.6.2 Time-of-flight method 199Chapter 4 The Place of NanoIBA in the Characterization Forest 2034.1 Introduction 2034.2 Scope of physical and chemical characterization 2034.2.1 Targeted information by material characterization 2044.2.2 Basic principle and instrumentation of material characterization 2054.3 Ion-based characterization techniques overview 2094.4 Ion-mass-spectroscopy-based characterization techniques versus IBA 2114.4.1 Secondary ion mass spectrometry 2114.4.2 Atom probe tomography 2174.5 Other characterization techniques versus IBA 2194.5.1 X-ray photoelectron spectroscopy 2204.5.2 X-ray diffraction 2224.5.3 X-ray absorption fine structure 2234.5.4 Analytical electron microscopy 2234.6 Emerging ion-beam-based techniques 2254.6.1 Low energy ion scattering 2264.6.2 Iono-luminescence 2264.6.3 Scanning helium ion microscopy 2264.6.4 Grazing incidence fast atoms diffraction 228List of Acronyms 231Bibliography 237Index 257