Ashish Raman – författare

This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design.The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design.The bookdiscusses nanoscale semiconductor materials, device models, and circuit designcovers nanoscale semiconductor device structures and modelingdiscusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowirecovers power dissipation and reduction techniquesDiscussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.

This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design.The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design.The bookdiscusses nanoscale semiconductor materials, device models, and circuit designcovers nanoscale semiconductor device structures and modelingdiscusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowirecovers power dissipation and reduction techniquesDiscussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.

The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.

This book includes high-quality papers presented at the Third International Conference on Computational Electronics for Wireless Communications (ICCWC 2023), held at Dr. B.