Athanasios Dimoulas – författare

Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Comprised of chapters authored by internationally recognised researchers, this book:Discusses the use of graphene for high-frequency analog circuitsExplores logic and photonic applications of molybdenum disulfide (MoS2)Addresses novel 2D materials including silicene, germanene, stanene, and phosphoreneConsiders the use of 2D materials for both field-effect transistors (FETs) and logic circuitsProvides background on the simulation of structural, electronic, and transport properties from first principles2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.

Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Comprised of chapters authored by internationally recognised researchers, this book:Discusses the use of graphene for high-frequency analog circuitsExplores logic and photonic applications of molybdenum disulfide (MoS2)Addresses novel 2D materials including silicene, germanene, stanene, and phosphoreneConsiders the use of 2D materials for both field-effect transistors (FETs) and logic circuitsProvides background on the simulation of structural, electronic, and transport properties from first principles2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.

This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.