Michel Houssa - Böcker
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4 produkter
4 produkter
901 kr
Skickas inom 10-15 vardagar
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.
698 kr
Skickas inom 10-15 vardagar
Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Comprised of chapters authored by internationally recognised researchers, this book:Discusses the use of graphene for high-frequency analog circuitsExplores logic and photonic applications of molybdenum disulfide (MoS2)Addresses novel 2D materials including silicene, germanene, stanene, and phosphoreneConsiders the use of 2D materials for both field-effect transistors (FETs) and logic circuitsProvides background on the simulation of structural, electronic, and transport properties from first principles2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.
2 869 kr
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The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.
2 692 kr
Skickas inom 10-15 vardagar
Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Comprised of chapters authored by internationally recognised researchers, this book:Discusses the use of graphene for high-frequency analog circuitsExplores logic and photonic applications of molybdenum disulfide (MoS2)Addresses novel 2D materials including silicene, germanene, stanene, and phosphoreneConsiders the use of 2D materials for both field-effect transistors (FETs) and logic circuitsProvides background on the simulation of structural, electronic, and transport properties from first principles2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.