Cary Y. Yang – författare

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.- Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book- The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field- The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions- Provides the most complete review of device degradation mechanisms as well as drain engineering methods- Contains the most extensive reference list on the subject

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

Presents a landmark volume documenting 100 years of field-effect transistor innovation and applications The invention of the field-effect transistor (FET) in 1925 transformed the trajectory of modern civilization, enabling virtually every electronic device in existence today. From the earliest integrated circuits to the most advanced computers and smartphones, the FET has served as the indispensable foundation of contemporary information technology. The FET Centennial: Celebrating the Field-Effect Transistor commemorates this milestone by gathering a distinguished group of contributors to provide a comprehensive account of the device’s history, global development, diverse applications, and potential future directions. This unique volume begins with an in-depth exploration of the history and evolution of FET technology, including the MOSFET’s rise and international advances across the United States, Europe, and Asia. It then highlights critical applications and integration processes, ranging from memory and logic devices to CMOS image sensors, analog/RF CMOS, and emerging thin-film and wide-bandgap transistors. Finally, it addresses state-of-the-art developments, such as 3D and gate-all-around FETs, nanoscale transport phenomena, and the incorporation of novel 2D materials, while considering the possibility of what is next for the FET and what might come after. A singular resource that not only documents a century of achievements but also contextualizes the field-effect transistor’s enduring importance and likely trajectory in the decades ahead, The FET Centennial: Addresses both historical milestones and technological disruptions shaping current and future electronicsExamines international research and development with narratives from the United States, Europe, and AsiaCovers device structures from MOSFETs to III-V and 2D-material-based FETsIncludes forward-looking analyses of nanoscale transport, 3D architectures, and GAAFET innovationsFeatures detailed coverage of process integration, interconnects, lithography, and compact modelingAuthored by globally recognized experts with leadership roles in academia, industry, and professional societies, The FET Centennial: Celebrating the Field-Effect Transistor is essential reading for graduate and senior undergraduate students in electrical engineering, materials science, and applied physics courses such as Semiconductor Devices, Integrated Circuit Technology, and Microelectronics. It is also an indispensable reference for researchers, practicing engineers, and historians of science and technology.

Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods, characterization, andmodels explaining experimental findings. The volume alsocontains the latest results in the exciting field of SiGe/Siheterojunction bipolar transistors.The reader will find this book valuable as a referencesource, an up-to-date and in-depth overview of this field,and, most importantly, as a window into the immense range ofreading potential applications of silicon carbide. It isessential for scientists, engineers and students interestedin electronic materials, high-speed heterojunction devices,and high-temperature optoelectronics.