Cor Claeys - Böcker

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.

The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.

State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Presents a landmark volume documenting 100 years of field-effect transistor innovation and applications The invention of the field-effect transistor (FET) in 1925 transformed the trajectory of modern civilization, enabling virtually every electronic device in existence today. From the earliest integrated circuits to the most advanced computers and smartphones, the FET has served as the indispensable foundation of contemporary information technology. The FET Centennial: Celebrating the Field-Effect Transistor commemorates this milestone by gathering a distinguished group of contributors to provide a comprehensive account of the device’s history, global development, diverse applications, and potential future directions. This unique volume begins with an in-depth exploration of the history and evolution of FET technology, including the MOSFET’s rise and international advances across the United States, Europe, and Asia. It then highlights critical applications and integration processes, ranging from memory and logic devices to CMOS image sensors, analog/RF CMOS, and emerging thin-film and wide-bandgap transistors. Finally, it addresses state-of-the-art developments, such as 3D and gate-all-around FETs, nanoscale transport phenomena, and the incorporation of novel 2D materials, while considering the possibility of what is next for the FET and what might come after. A singular resource that not only documents a century of achievements but also contextualizes the field-effect transistor's enduring importance and likely trajectory in the decades ahead, The FET Centennial: Addresses both historical milestones and technological disruptions shaping current and future electronicsExamines international research and development with narratives from the United States, Europe, and AsiaCovers device structures from MOSFETs to III-V and 2D-material-based FETsIncludes forward-looking analyses of nanoscale transport, 3D architectures, and GAAFET innovationsFeatures detailed coverage of process integration, interconnects, lithography, and compact modelingAuthored by globally recognized experts with leadership roles in academia, industry, and professional societies, The FET Centennial: Celebrating the Field-Effect Transistor is essential reading for graduate and senior undergraduate students in electrical engineering, materials science, and applied physics courses such as Semiconductor Devices, Integrated Circuit Technology, and Microelectronics. It is also an indispensable reference for researchers, practicing engineers, and historians of science and technology.

material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc.