Cor Claeys – författare

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.

The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.

State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.- State-of-the-art information available for the first time as an all-in-source- Extensive reference list making it an indispensable reference book- Broad coverage from fundamental aspects up to industrial applications

Low Temperature Electronics: Physics, Devices, Circuits, and Applications summarizes the recent advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. Furthermore, this book provides an exploration of the currently available theory, research, and technologies related to cryoelectronics, including treatment of the solid state physical properties of the materials used in these systems. Current applications are found in infrared systems, satellite communications and medical equipment. There are opportunities to expand in newer fields such as wireless and mobile communications, computers, and measurement and scientific equipment. Low temperature operations can offer certain advantages such as higher operational speeds, lower power dissipation, shorter signal transmission times, higher semiconductor and metal thermal conductivities, and improved digital and analog circuit performance.The computer, telecommunication, and cellular phone market is pushing the semiconductor industry towards the development of very aggressive device and integrated circuit fabrication technologies. This is taking these technologies towards the physical miniaturization limit, where quantum effects and fabrication costs are becoming a technological and economical barrier for further development. In view of these limitations, operation of semiconductor devices and circuits at low temperature (cryogenic temperature) is studied in this book.* It is a book intended for a wide audience: students, scientists, technology development engineers, private companies, universities, etc.* It contains information which is for the first time available as an all-in-one source; Interdisciplinary material is arranged and made compatible in this book* It is a must as reference source

Presents a landmark volume documenting 100 years of field-effect transistor innovation and applications The invention of the field-effect transistor (FET) in 1925 transformed the trajectory of modern civilization, enabling virtually every electronic device in existence today. From the earliest integrated circuits to the most advanced computers and smartphones, the FET has served as the indispensable foundation of contemporary information technology. The FET Centennial: Celebrating the Field-Effect Transistor commemorates this milestone by gathering a distinguished group of contributors to provide a comprehensive account of the device’s history, global development, diverse applications, and potential future directions. This unique volume begins with an in-depth exploration of the history and evolution of FET technology, including the MOSFET’s rise and international advances across the United States, Europe, and Asia. It then highlights critical applications and integration processes, ranging from memory and logic devices to CMOS image sensors, analog/RF CMOS, and emerging thin-film and wide-bandgap transistors. Finally, it addresses state-of-the-art developments, such as 3D and gate-all-around FETs, nanoscale transport phenomena, and the incorporation of novel 2D materials, while considering the possibility of what is next for the FET and what might come after. A singular resource that not only documents a century of achievements but also contextualizes the field-effect transistor’s enduring importance and likely trajectory in the decades ahead, The FET Centennial: Addresses both historical milestones and technological disruptions shaping current and future electronicsExamines international research and development with narratives from the United States, Europe, and AsiaCovers device structures from MOSFETs to III-V and 2D-material-based FETsIncludes forward-looking analyses of nanoscale transport, 3D architectures, and GAAFET innovationsFeatures detailed coverage of process integration, interconnects, lithography, and compact modelingAuthored by globally recognized experts with leadership roles in academia, industry, and professional societies, The FET Centennial: Celebrating the Field-Effect Transistor is essential reading for graduate and senior undergraduate students in electrical engineering, materials science, and applied physics courses such as Semiconductor Devices, Integrated Circuit Technology, and Microelectronics. It is also an indispensable reference for researchers, practicing engineers, and historians of science and technology.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.