Ronald J. Gutmann – författare
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7 produkter
7 produkter
Inbunden, Engelska, 2008
1 616 kr
Skickas inom 10-15 vardagar
Three-dimensional (3D) integration is clearly the simplest answer to most of the semiconductor industry’s vexing problems: heterogeneous integration and red- tions of power, form factor, delay, and even cost. Conceptually the power, latency, and form factor of a system with a ?xed number of transistors all scale roughly linearly with the diameter of the smallest sphere enclosing frequently interacting devices. This clearly provides the fundamental motivation behind 3D technologies which vertically stack several strata of device and interconnect layers with high vertical interconnectivity. In addition, the ability to vertically stack strata with - vergent and even incompatible process ?ows provides for low cost and low parasitic integration of diverse technologies such as sensors, energy scavengers, nonvolatile memory, dense memory, fast memory, processors, and RF layers. These capabilities coupled with today’s trends of increasing levels of integrated functionality, lower power, smaller form factor, increasingly divergent process ?ows, and functional diversi?cation would seem to make 3D technologies a natural choice for most of the semiconductor industry. Since the concept of vertical integration of different strata has been around for over 20 years, why aren’t vertically stacked strata endemic to the semiconductor industry? The simple answer to this question is that in the past, the 3D advantages while interesting were not necessary due to the tremendous opportunities offered by geometric scaling. In addition, even when the global interconnect problem of high-performance single-core processors seemed insurmountable without inno- tions such as 3D, alternative architectural solutions such as multicores could eff- tivelydelaybutnoteliminatetheneedfor3D.
E-bok
PDF, Engelska, 20091 977 kr
Läs direkt efter köp
Three-dimensional (3D) integration is clearly the simplest answer to most of the semiconductor industry’s vexing problems: heterogeneous integration and red- tions of power, form factor, delay, and even cost. Conceptually the power, latency, and form factor of a system with a ?xed number of transistors all scale roughly linearly with the diameter of the smallest sphere enclosing frequently interacting devices. This clearly provides the fundamental motivation behind 3D technologies which vertically stack several strata of device and interconnect layers with high vertical interconnectivity. In addition, the ability to vertically stack strata with - vergent and even incompatible process ?ows provides for low cost and low parasitic integration of diverse technologies such as sensors, energy scavengers, nonvolatile memory, dense memory, fast memory, processors, and RF layers. These capabilities coupled with today’s trends of increasing levels of integrated functionality, lower power, smaller form factor, increasingly divergent process ?ows, and functional diversi?cation would seem to make 3D technologies a natural choice for most of the semiconductor industry. Since the concept of vertical integration of different strata has been around for over 20 years, why aren’t vertically stacked strata endemic to the semiconductor industry? The simple answer to this question is that in the past, the 3D advantages while interesting were not necessary due to the tremendous opportunities offered by geometric scaling. In addition, even when the global interconnect problem of high-performance single-core processors seemed insurmountable without inno- tions such as 3D, alternative architectural solutions such as multicores could eff- tivelydelaybutnoteliminatetheneedfor3D.
Inbunden, Engelska, 2002
1 620 kr
Skickas inom 10-15 vardagar
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-k) insulator as a replacement for silicon dioxide is the behaviour of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-k dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this text is to merge complex CMP models and mechanisms with experimental results with copper and low-&kgr to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
Häftad, Engelska, 2010
1 620 kr
Skickas inom 10-15 vardagar
Three-dimensional (3D) integration is clearly the simplest answer to most of the semiconductor industry’s vexing problems: heterogeneous integration and red- tions of power, form factor, delay, and even cost. Conceptually the power, latency, and form factor of a system with a ?xed number of transistors all scale roughly linearly with the diameter of the smallest sphere enclosing frequently interacting devices. This clearly provides the fundamental motivation behind 3D technologies which vertically stack several strata of device and interconnect layers with high vertical interconnectivity. In addition, the ability to vertically stack strata with - vergent and even incompatible process ?ows provides for low cost and low parasitic integration of diverse technologies such as sensors, energy scavengers, nonvolatile memory, dense memory, fast memory, processors, and RF layers. These capabilities coupled with today’s trends of increasing levels of integrated functionality, lower power, smaller form factor, increasingly divergent process ?ows, and functional diversi?cation would seem to make 3D technologies a natural choice for most of the semiconductor industry. Since the concept of vertical integration of different strata has been around for over 20 years, why aren’t vertically stacked strata endemic to the semiconductor industry? The simple answer to this question is that in the past, the 3D advantages while interesting were not necessary due to the tremendous opportunities offered by geometric scaling. In addition, even when the global interconnect problem of high-performance single-core processors seemed insurmountable without inno- tions such as 3D, alternative architectural solutions such as multicores could eff- tivelydelaybutnoteliminatetheneedfor3D.
Häftad, Engelska, 2014
1 620 kr
Skickas inom 10-15 vardagar
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
E-bok
PDF, Engelska, 20132 049 kr
Läs direkt efter köp
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials.
The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
E-bok
PDF, Engelska, 20082 228 kr
Läs direkt efter köp
Chemical Mechanical Planarization (CMP) plays an important role in today''s microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.