Alastair Armstrong is Professor of Electronic Engineering in the School of Electrical and Electronic Engineering, Queen's University Belfast. He has 30 years experience in simulation and design of semiconductor devices and circuits, and has published more than 130 journal and conference papers on related topics. His most recent publications cover the modelling of different semiconductor technologies including bipolar, MOS and silicon on insulator. Over the course of his career Armstrong has acted as a consultant to several international companies. He has been awarded twelve major research grants; many as principal investigator. He is a member of the Northern Ireland Semiconductor Research Centre, currently actively researching the modelling of novel types of multiple gate MOS transistor structures for nanotechnology.Chinmay K. Maiti is a Professor in Electronics at the Indian Institute of Technology, Kharagpur, India. He is a member of the microelectronics research group within the Department of Electronics and Electrical Communication Engineering. His current research interests cover different aspects of semiconductor process and device simulation, with particular emphasis on SiGe and SiGeC heterojunction bipolar transistors, SiGe channel and strained-Si channel MOSFETs involving ultra-thin gate oxides, including high-k gate dielectrics. Maiti has authored or co-authored more than 150 technical papers and conference publications in relevant areas and is a Senior Member of the IEEE.

• Chapter 1: IntroductionChapter 2: Technology and TCAD toolsChapter 3: Diffusion and oxidation of SiGe/SiGeC filmsChapter 4: Strain-engineered MOSFETsChapter 5: SOI MOSFETsChapter 6: Heterostructure bipolar transistorsChapter 7: SiGe/SiGeC HBT technologyChapter 8: MOSFET: compact modelsChapter 9: HBT: compact modelsChapter 10: Design and simulation of high-speed devicesChapter 11: Passive components

Alastair Armstrong is Professor of Electronic Engineering in the School of Electrical and Electronic Engineering, Queen's University Belfast. He has 30 years experience in simulation and design of semiconductor devices and circuits, and has published more than 130 journal and conference papers on related topics. His most recent publications cover the modelling of different semiconductor technologies including bipolar, MOS and silicon on insulator. Over the course of his career Armstrong has acted as a consultant to several international companies. He has been awarded twelve major research grants; many as principal investigator. He is a member of the Northern Ireland Semiconductor Research Centre, currently actively researching the modelling of novel types of multiple gate MOS transistor structures for nanotechnology.Chinmay K. Maiti is a Professor in Electronics at the Indian Institute of Technology, Kharagpur, India. He is a member of the microelectronics research group within the Department of Electronics and Electrical Communication Engineering. His current research interests cover different aspects of semiconductor process and device simulation, with particular emphasis on SiGe and SiGeC heterojunction bipolar transistors, SiGe channel and strained-Si channel MOSFETs involving ultra-thin gate oxides, including high-k gate dielectrics. Maiti has authored or co-authored more than 150 technical papers and conference publications in relevant areas and is a Senior Member of the IEEE.

• Chapter 1: IntroductionChapter 2: Technology and TCAD toolsChapter 3: Diffusion and oxidation of SiGe/SiGeC filmsChapter 4: Strain-engineered MOSFETsChapter 5: SOI MOSFETsChapter 6: Heterostructure bipolar transistorsChapter 7: SiGe/SiGeC HBT technologyChapter 8: MOSFET: compact modelsChapter 9: HBT: compact modelsChapter 10: Design and simulation of high-speed devicesChapter 11: Passive components